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| Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm For digital circuits Features * Costs can be reduced through downsizing of the equipment and reduction of the number of parts. * Mini type package allowing easy automatic insertion through tape packing and magazine packing 1 0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3 0.16+0.10 -0.06 2 (0.65) (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 Resistance by Part Number * UNR2121 * UNR2122 * UNR2123 * UNR2124 * UNR212X * UNR212Y Marking Symbol (R1) (UN2121) 7A 2.2 k (UN2122) 7B 4.7 k (UN2123) 7C 10 k (UN2124) 7D 2.2 k (UN212X) 7I 0.27 k (UN212Y) 7Y 3.1 k (R2) 2.2 k 4.7 k 10 k 10 k 5 k 4.6 k 10 1.1+0.2 -0.1 1.1+0.3 -0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -500 200 150 -55 to +150 Unit V V mA mW C C R1 B R2 E C Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) UNR212X Collector-emitter cutoff current (Base open) UNR212X Emitter-base UNR2121 IEBO VEB = -6 V, IC = 0 ICEO VCE = -50 V, IB = 0 Symbol VCBO VCEO ICBO Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 Min -50 -50 -1.0 - 0.1 -1.0 - 0.5 -5 -2 -1 hFE VCE = -10 V, IC = -5 mA 40 50 60 20 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00008CED Typ 0 to 0.1 Max Unit V V A A mA cutoff current UNR2122/212X/212Y (Collector open) UNR2123/2124 Forward current UNR2121 transfer ratio UNR2122/212Y UNR2123/2124 UNR212X 0.40.2 5 1 UNR212x Series Electrical Characteristics (continued) Ta = 25C 3C Parameter Collector-emitter saturation voltage UNR212X/212Y Output voltage high-level Output voltage low-level Transition frequency Input resistance UNR2121/2124 UNR2122 UNR2123 UNR212X UNR212Y Resistance ratio UNR2124 UNR212X UNR212Y R1/R2 0.8 0.17 0.043 0.53 VOH VOL fT R1 Symbol VCE(sat) Conditions IC = -100 mA, IB = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 500 VCC = -5 V, VB = -3.5 V, RL = 500 VCB = -10 V, IE = 50 mA, f = 200 MHz -30% 200 2.2 4.7 10 0.27 3.1 1.0 0.22 0.054 0.67 1.2 0.27 0.065 0.81 +30% -4.9 - 0.2 V V MHz k Min Typ Max - 0.25 Unit V Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) 2 SJH00008CED UNR212x Series Characteristics charts of UNR2121 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 400 hFE IC VCE = -10 V -240 Collector current IC (mA) -160 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -2 -4 -6 -8 -10 -12 -10 Forward current transfer ratio hFE -200 300 Ta = 75C -120 -1 Ta = 75C 25C 200 -80 - 0.1 -25C -10 -100 -1 000 100 25C -40 -25C 0 -1 -10 -100 -1 000 0 0 - 0.01 -1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 12 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 10 Output current IO (A) 8 Input voltage VIN (V) -103 -10 6 -102 -1 4 -10 - 0.1 2 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2122 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 160 VCE = -10 V hFE IC Ta = 75C -300 Collector current IC (mA) -200 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -10 Forward current transfer ratio hFE -250 120 25C -150 -1 Ta = 75C 25C 80 -100 -25C 40 - 0.1 -25C -50 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00008CED 3 UNR212x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 20 Output current IO (A) 16 Input voltage VIN (V) -103 -10 12 -102 -1 8 -10 - 0.1 4 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2123 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -240 VCE(sat) IC -100 Ta = 25C hFE IC 200 VCE = -10 V 25C Ta = 75C IC / IB = 10 Collector current IC (mA) -160 -120 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA -10 Forward current transfer ratio hFE -200 150 -1 Ta = 75C 25C 100 -25C -80 - 0.1 50 -40 - 0.2 mA - 0.1 mA -25C -10 -100 -1 000 0 -1 -10 -100 -1 000 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 20 Output current IO (A) 16 Input voltage VIN (V) -103 -10 12 -102 -1 8 -10 - 0.1 4 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJH00008CED UNR212x Series Characteristics charts of UNR2124 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -300 Collector current IC (mA) -200 -150 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -10 Forward current transfer ratio hFE -250 300 Ta = 75C 200 25C -25C 100 -1 Ta = 75C 25C -100 - 0.1 -25C -10 -100 -1 000 -50 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 20 Output current IO (A) 16 Input voltage VIN (V) -103 -10 12 -102 -1 8 -10 - 0.1 4 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR212X IC VCE Collector-emitter saturation voltage VCE(sat) (V) -240 Ta = 25C -100 VCE(sat) IC IC / IB = 10 hFE IC 240 VCE = -10 V Collector current IC (mA) -160 IB = -1.6 mA -1.4 mA -1.2 mA -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA - 0.2 mA -10 Forward current transfer ratio hFE -200 200 160 Ta = 75C 25C 80 -25C -120 -1 Ta = 75C 25C - 25C 120 -80 - 0.1 -40 40 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00008CED 5 UNR212x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 20 16 Input voltage VIN (V) -10 12 -1 8 - 0.1 4 0 -1 -10 -100 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR212Y IC VCE Collector-emitter saturation voltage VCE(sat) (V) -240 Ta = 25C VCE(sat) IC -100 IC / IB = 10 hFE IC 240 VCE = -10 V Collector current IC (mA) IB = -1.2 mA -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA -40 - 0.2 mA 0 0 -2 -4 -6 -8 -10 -12 -10 -160 Forward current transfer ratio hFE -200 200 160 Ta = 75C 25C -25C -120 -1 Ta = 75C 25C -25C 120 -80 80 - 0.1 40 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 20 16 Input voltage VIN (V) -10 -100 -10 12 -1 8 - 0.1 4 0 -1 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) 6 SJH00008CED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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